PRESSURE SENSORS ON THE BASIS OF STRAIN-SENSING SEMI-CONDUCTOR ELEMENTS

Authors

  • Volodymyr Osadchuk Vinnytsia National Technical University
  • Olexandyr Osadchuk Vinnytsia National Technical University
  • Andriy Kryvosheya Vinnytsia National Technical University

Keywords:

sensor, pressure sensors, pressure measurement, strain-sensing element

Abstract

Semi-conductor strain-sensing elements are analysed: strain gauges, strain-sensing diodes, strain-sensing transistors underlying pressure sensors, and also semi-conductor pressure sensors with frequency output on the basis of the given elements. Influence of pressure on the given semiconductor structure is shown.

Author Biographies

Volodymyr Osadchuk, Vinnytsia National Technical University

the manager of the electronics department

Olexandyr Osadchuk, Vinnytsia National Technical University

the manager of the radio engineering department

Andriy Kryvosheya, Vinnytsia National Technical University

the post-graduate student of the electronics department

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Abstract views: 165

Published

2015-12-02

How to Cite

[1]
V. Osadchuk, O. Osadchuk, and A. Kryvosheya, “PRESSURE SENSORS ON THE BASIS OF STRAIN-SENSING SEMI-CONDUCTOR ELEMENTS”, Works of VNTU, no. 1, Dec. 2015.

Issue

No. 1 (2008): 2008№1

Section

Radioelectronics and Radioelectronic Equipment Design

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