DISTRIBUTION OF INJECTED CHARGE CARRIERS CONCENTRATION  IN BASE REGION UNDER THE IMPACT OF MAGNETIC FIELD IN  BIPOLAR MAGNETOSENSITIVE STRUCTURES

Volodymyr Osadchuk; Olexandre Osadchuk

DISTRIBUTION OF INJECTED CHARGE CARRIERS CONCENTRATION IN BASE REGION UNDER THE IMPACT OF MAGNETIC FIELD IN BIPOLAR MAGNETOSENSITIVE STRUCTURES

Автор(и)

Volodymyr Osadchuk Vinnytsia National Technical University
Olexandre Osadchuk Vinnytsia National Technical University

Ключові слова:

magnetic field, sensors, bipolar transistor

Анотація

The paper studies the impact of magnetic field on the distribution of charge carriers concentration in base region of bipolar magnetosensitive structures. Theoretical dependences of bipolar transistors parametrs are obtained while taking into account this impact.

Біографії авторів

Volodymyr Osadchuk, Vinnytsia National Technical University

Dc. Sc. (Eng)., Professor of the Chair of Electronics

Olexandre Osadchuk, Vinnytsia National Technical University

Dc. Sc. (Eng)., Professor, Head of the Chair of Radioengineering

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Переглядів анотації: 204

Опубліковано

2015-11-30

Як цитувати

[1]

V. Osadchuk і O. Osadchuk, «DISTRIBUTION OF INJECTED CHARGE CARRIERS CONCENTRATION IN BASE REGION UNDER THE IMPACT OF MAGNETIC FIELD IN BIPOLAR MAGNETOSENSITIVE STRUCTURES», Scientific Works of Vinnytsia National Technical University, вип. 3, Лис 2015.