DISTRIBUTION OF INJECTED CHARGE CARRIERS CONCENTRATION IN BASE REGION UNDER THE IMPACT OF MAGNETIC FIELD IN BIPOLAR MAGNETOSENSITIVE STRUCTURES

Authors

  • Volodymyr Osadchuk Vinnytsia National Technical University
  • Olexandre Osadchuk Vinnytsia National Technical University

Keywords:

magnetic field, sensors, bipolar transistor

Abstract

The paper studies the impact of magnetic field on the distribution of charge carriers concentration in base region of bipolar magnetosensitive structures. Theoretical dependences of bipolar transistors parametrs are obtained while taking into account this impact.

Author Biographies

Volodymyr Osadchuk, Vinnytsia National Technical University

Dc. Sc. (Eng)., Professor of the Chair of Electronics

Olexandre Osadchuk, Vinnytsia National Technical University

Dc. Sc. (Eng)., Professor, Head of the Chair of Radioengineering

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Abstract views: 152

Published

2015-11-30

How to Cite

[1]
V. Osadchuk and O. Osadchuk, “DISTRIBUTION OF INJECTED CHARGE CARRIERS CONCENTRATION IN BASE REGION UNDER THE IMPACT OF MAGNETIC FIELD IN BIPOLAR MAGNETOSENSITIVE STRUCTURES”, Works of VNTU, no. 3, Nov. 2015.

Issue

No. 3 (2011): 2011№3

Section

Radioelectronics and Radioelectronic Equipment Design

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