MULTIFREQUENCY GENERATOR, BASED ON CAPACITANCE EFFECT OF FIELD –EFFECT TRANSSISTOR STRUCTURE WITH NEGATIVE RESISTNCE

Authors

  • Oleksandr Osadchuk Vinnytsia National Technical University
  • Andriy Semenov Vinnytsia National Technical University
  • Костянтин Коваль Vinnytsia National Technical University

Keywords:

mathematical model, transistor structure, negative resistance, multifrequency generator, equivalent capacitance

Abstract

Investigation of multifrequency signals generator with complex spectral characteristic is carried out. Mathematical model has been obtained, experimental research and numerical modeling of multifrequency generator, based on capacitance effect of field-effect transistor structure with negative resistance have been performed.

Author Biographies

Oleksandr Osadchuk, Vinnytsia National Technical University

Dc. Sc. (Eng.), Professor, Head of the Chair of Radioengineering

Andriy Semenov, Vinnytsia National Technical University

Assistant Professor, Department of Radioengineering

Костянтин Коваль, Vinnytsia National Technical University

Assistant, Department of Radioengineering

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Published

2015-11-30

How to Cite

[1]
O. Osadchuk, A. Semenov, and К. Коваль, “MULTIFREQUENCY GENERATOR, BASED ON CAPACITANCE EFFECT OF FIELD –EFFECT TRANSSISTOR STRUCTURE WITH NEGATIVE RESISTNCE”, Works of VNTU, no. 2, Nov. 2015.

Issue

Section

Radioelectronics and Radioelectronic Equipment Design

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