CAPACITIVE ACTIVE ELEMENT ON THE FIELD-TRANSISTOR STRUCTURE WITH NEGATIVE RESISTANCE

Автор(и)

  • Oleksandr Osadchuk Vinnytsia National Technical University
  • Andriy Semenov Vinnytsia National Technical University
  • Oleksandr Lazarev Vinnytsia National Technical University
  • Konstantin Koval Vinnytsia National Technical University

Ключові слова:

field-transistor structure, negative resistance, radio-measuring device, equivalent capacitance, impedance

Анотація

The results of studying the capacitive active element on a field-transistor structure with negative resistance are presented. Analytical dependences of the impedance on the supply and control voltages are obtained. Volt-ampere, frequency and volt-farad dependencies of the equivalent capacity of the active element on a field-transistor structure with negative resistance are investigated.

Біографії авторів

Oleksandr Osadchuk, Vinnytsia National Technical University

Head of the Radio-Engineering Department

Andriy Semenov, Vinnytsia National Technical University

Assist. Prof. of the Radio-Engineering Department

Oleksandr Lazarev, Vinnytsia National Technical University

Assist. Prof. of the Department of Designing Computer and Telecommunication Equipment

Konstantin Koval, Vinnytsia National Technical University

Ssenior Lecturer of the Radio-Engineering Department

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Переглядів анотації: 217

Опубліковано

2015-11-29

Як цитувати

[1]
O. Osadchuk, A. Semenov, O. Lazarev, і K. Koval, «CAPACITIVE ACTIVE ELEMENT ON THE FIELD-TRANSISTOR STRUCTURE WITH NEGATIVE RESISTANCE», Scientific Works of Vinnytsia National Technical University, вип. 4, Лис 2015.

Номер

№ 4 (2011): 2011№4

Розділ

Radioelectronics and Radioelectronic Equipment Design

Метрики

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