“QUALITY” ANALYSIS OF ONE-CRYSTAL IMMITANCE CONVERTERS

Authors

  • Ludmila Lyschinska Vinnytsia Institute of Trade and Economics
  • Yana Rozhkova Vinnytsia National Technical University
  • Mykola Filiniuk Vinnytsia National Technical University

Keywords:

generalized immitance converter, unijunction transistor, bipolar transistor, field transistor, sensitivity coefficient, quality

Abstract

The paper presents the development of mathematical models of generalized immitance converters (GIC) that take into account the dependence of their converted immitances on the physical parameters of transistors. STk αi quality dependence on physical parameters of the abovementioned transistors is investigated.

Author Biographies

Ludmila Lyschinska, Vinnytsia Institute of Trade and Economics

Сand. Sc. (Eng.), Assoc. Prof.

Yana Rozhkova, Vinnytsia National Technical University

Student of Vinnytsia national technical university

Mykola Filiniuk, Vinnytsia National Technical University

Dc. Sc. (Eng.), Prof

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Abstract views: 134

Published

2015-11-30

How to Cite

[1]
L. Lyschinska, Y. Rozhkova, and M. Filiniuk, “‘QUALITY’ ANALYSIS OF ONE-CRYSTAL IMMITANCE CONVERTERS”, Works of VNTU, no. 3, Nov. 2015.

Issue

No. 3 (2010): 2010№3

Section

Automatics and Information Measuring Facilities

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