INFORMATION DEVIAS ON THE BASIK OF UNIFUNCTION TRANSISTOR STRUCTURE

  • Ludmyla Lishchynska Vinnytsia Institute of Trade and Economics
  • Marija Baraban Vinnytsia National Technical University
Keywords: unijunction transistor structure, generalized transformer of immitence

Abstract

On the base of reactive properties of unijunction transistor, there had been developed the elements of information devices, which, in comparison with the known analogues, have the improved technical characteristics, namely: improved reliability, good quality, lower level of noise, small dimensions.

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Author Biographies

Ludmyla Lishchynska, Vinnytsia Institute of Trade and Economics
Cand. Sc. (Eng),Assistant-Prof
Marija Baraban, Vinnytsia National Technical University
Post-graduate, Department of Computer and Telecommunication equipment design
Published
2015-12-01
How to Cite
[1]
L. Lishchynska and M. Baraban, “INFORMATION DEVIAS ON THE BASIK OF UNIFUNCTION TRANSISTOR STRUCTURE”, SWVNTU, no. 1, Dec. 2015.
Section
Radioelectronics and Radioelectronic Equipment Design