INFORMATION DEVIAS ON THE BASIK OF UNIFUNCTION TRANSISTOR STRUCTURE

Автор(и)

  • Ludmyla Lishchynska Vinnytsia Institute of Trade and Economics
  • Marija Baraban Vinnytsia National Technical University

Ключові слова:

unijunction transistor structure, generalized transformer of immitence

Анотація

On the base of reactive properties of unijunction transistor, there had been developed the elements of information devices, which, in comparison with the known analogues, have the improved technical characteristics, namely: improved reliability, good quality, lower level of noise, small dimensions.

Біографії авторів

Ludmyla Lishchynska, Vinnytsia Institute of Trade and Economics

Cand. Sc. (Eng),Assistant-Prof

Marija Baraban, Vinnytsia National Technical University

Post-graduate, Department of Computer and Telecommunication equipment design

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Переглядів анотації: 298

Опубліковано

2015-12-01

Як цитувати

[1]
L. Lishchynska і M. Baraban, «INFORMATION DEVIAS ON THE BASIK OF UNIFUNCTION TRANSISTOR STRUCTURE», SWVNTU, вип. 1, Груд 2015.

Номер

№ 1 (2010): 2010 №1

Розділ

Radioelectronics and Radioelectronic Equipment Design

Метрики

Завантаження

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