INFORMATION DEVIAS ON THE BASIK OF UNIFUNCTION TRANSISTOR STRUCTURE

Authors

  • Ludmyla Lishchynska Vinnytsia Institute of Trade and Economics
  • Marija Baraban Vinnytsia National Technical University

Keywords:

unijunction transistor structure, generalized transformer of immitence

Abstract

On the base of reactive properties of unijunction transistor, there had been developed the elements of information devices, which, in comparison with the known analogues, have the improved technical characteristics, namely: improved reliability, good quality, lower level of noise, small dimensions.

Author Biographies

Ludmyla Lishchynska, Vinnytsia Institute of Trade and Economics

Cand. Sc. (Eng),Assistant-Prof

Marija Baraban, Vinnytsia National Technical University

Post-graduate, Department of Computer and Telecommunication equipment design

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Abstract views: 249

Published

2015-12-01

How to Cite

[1]
L. Lishchynska and M. Baraban, “INFORMATION DEVIAS ON THE BASIK OF UNIFUNCTION TRANSISTOR STRUCTURE”, Works of VNTU, no. 1, Dec. 2015.

Issue

No. 1 (2010): 2010 №1

Section

Radioelectronics and Radioelectronic Equipment Design

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