MULTICOMPONENT OHMIC CONTACTS TO GaAs
Keywords:
gallium-arsenide, ternary alloy, vacuum deposition, heat treatment, specific resistance, ohmic contactAbstract
The paper contains the results of the study of semiconductor wafer preprocessing, application and heat treatment modes of Ag-GE-In/n-n Ga As contacts impact on specific transient resistance.
References
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6. Dmitriev V. S. Impact of the interface on the parameters of ohmic contact / V. S. Dmitriev, L. B. Dmitrieva // Materials of X International Scientific practical conference «Actual research and development-2014» / V. S. Dmitriev, L. B. Dmitrieva. – Sofia : «Bel Grad-BG» ООD. – 2014. – Vol. 28. – P. 79 – 82. – (ISBN 978-966-8736-05-6). (Rus).
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M. Kawamura, Y. Abe, K. Sasaki // Microelectronic Engineering. – 2007. – Vol. 84, № 11. – P. 2476 – 2480.
9. Vartanian Т. А. Delayed action of illumination on the relaxation of granular silver film at thermal annealing / Т. А. Vartanian, N. B. Leonov, S. G. Prizhibelskiy // Optical Journal. – 2013. – Vol. 80, № 2. – P. 24 – 28. (Rus).
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Vol. 89, № 7. – P. 072105–1–072105–3. – Access mode to the resource : http://dx.doi.org/10.1063/1.2337102.
11. Kawamura M. Electrical and morphological change of Ag–Ni films by annealing in vacuum / M. Kawamura,
M. Yamaguchi, Y. Abe, K. Sasaki // Microelectronic Engineering. – 2005. – Vol. 82, № 3 – 4. – P. 277 – 282.
12. Kim H. C. Improvement of the thermal stability of silver metallization / H. C. Kim, T. L. Alford // Journal of Applied Physics. – 2003. – Vol. 94, № 8. – Р. 5393 – 5395.
13. Markin B. V. Impact of chemical treatment on the composition of GaAs surface / B. V. Markin, V. V. Chikun // Electronic engineering. Series 1. Electronics of SHF. – 1990. – № 4. – P. 19. (Rus).
14. Physical chemical methods of senriconductors surfaces treatment / [B. D. Luft, V. А. Perevotchikov,
N. М. Vozmilova et al.]. – М. : Radio and Communication, 1982. – 136 p. (Rus).
15. Patent 2319798of Russian Federation, IPC H 01 L 21/302. Method of obtaining atomically-smooth surface of gallium-arsenide substrate / Bezriadin N. N., Коtоv G. I., Starodubtsev А. А., Strygin V. D., Arsentiev I. N.; applicant for a patent and patent holder Voronezh State Technological Academy. – № 2006116830/15 ; claimed 16.05.06 ; published 20.03.08, Bul. № 8. (Rus).
16. Patent 2402103 of Russian Federation, IPC H 01 L 21/316. Method of GaAs surface etching / Erofeev Е. V., Ishutkin S. V., Kagadey V. А., Nosaeva K. S.; applicant for a patent and patent holder CJSC «Scientific production company Mikran». – №2009133993/28 ; claimed 10.09.09 ; published 20.10.10, Bul. № 29. (Rus).
17. Niskov V. J. Measurement of transient resistance of ohmic contacts to thin layers of semiconductors /
V. J. Niskov // Devices and experiment technique. – 1971. – № 1. – P. 235 – 237. (Rus).
18. Niskov V. J. Resistance of ohmic contacts to thin layers of semiconductors / V. J. Niskov,
G. А. Kubetskiy // Physics and semiconductors engineering. – 1970. – Vol. 4, № 9. – P. 1806 – 1808. (Rus).
2. Sze S. M. Physics of Semiconductor Devices, 3rd Edition / S. M. Sze, K. K. Ng. – Hoboken : A John Wiley & Sons, Inc., 2007. – 815 р.
3. Ti/Pd/Ag Contacts to n-Type GaAs for High Current Density Devices [Electronic resource] / P. Huo,
I. Rey-Stolle // Journal of Electronic Materials. – 2016. – Vol. 45, № 6. – P. 2769 – 2775. – Access mode to the resource : http://dx.doi.org/10.1007/s11664-016-4432-6.
4. Kawamura M. Electrical and morphological change of Ag–Ni films by annealing in vacuum / M. Kawamura,
M. Yamaguchi, Y. Abe, K. Sasaki // Microelectronic Engineering. – 2005. – Vol. 82, № 3 – 4. – P. 277 – 282.
5. Christou A. Solid phase formation in Au: Ge/Ni, Ag/In/Ge, In/Au: Ge GaAs ohmic contact systems / A. Christou // Solid-State Electronics. – 1979. – Vol. 22, № 2. – P. 141 – 149.
6. Dmitriev V. S. Impact of the interface on the parameters of ohmic contact / V. S. Dmitriev, L. B. Dmitrieva // Materials of X International Scientific practical conference «Actual research and development-2014» / V. S. Dmitriev, L. B. Dmitrieva. – Sofia : «Bel Grad-BG» ООD. – 2014. – Vol. 28. – P. 79 – 82. – (ISBN 978-966-8736-05-6). (Rus).
7. Thermal stability of Ag films in air prepared by thermal evaporation / L. Jing, L. Fachun, L. Limei [et al.] // Applied Surface Science. – 2007. – Vol. 253, № 17. – P. 7036 – 7040.
8. Sugawara K. Comparison of the agglomeration behavior of Ag(Al) films and Ag(Au) films / K. Sugawara,
M. Kawamura, Y. Abe, K. Sasaki // Microelectronic Engineering. – 2007. – Vol. 84, № 11. – P. 2476 – 2480.
9. Vartanian Т. А. Delayed action of illumination on the relaxation of granular silver film at thermal annealing / Т. А. Vartanian, N. B. Leonov, S. G. Prizhibelskiy // Optical Journal. – 2013. – Vol. 80, № 2. – P. 24 – 28. (Rus).
10. Electrical and structural investigations of Ag-based Ohmic contacts for InAlAs/InGaAs/InP high electron mobility transistors [Electronic resource] / W. Zhao, L. Wang, I. Adesida // Applied Physics Letters. – 2006. –
Vol. 89, № 7. – P. 072105–1–072105–3. – Access mode to the resource : http://dx.doi.org/10.1063/1.2337102.
11. Kawamura M. Electrical and morphological change of Ag–Ni films by annealing in vacuum / M. Kawamura,
M. Yamaguchi, Y. Abe, K. Sasaki // Microelectronic Engineering. – 2005. – Vol. 82, № 3 – 4. – P. 277 – 282.
12. Kim H. C. Improvement of the thermal stability of silver metallization / H. C. Kim, T. L. Alford // Journal of Applied Physics. – 2003. – Vol. 94, № 8. – Р. 5393 – 5395.
13. Markin B. V. Impact of chemical treatment on the composition of GaAs surface / B. V. Markin, V. V. Chikun // Electronic engineering. Series 1. Electronics of SHF. – 1990. – № 4. – P. 19. (Rus).
14. Physical chemical methods of senriconductors surfaces treatment / [B. D. Luft, V. А. Perevotchikov,
N. М. Vozmilova et al.]. – М. : Radio and Communication, 1982. – 136 p. (Rus).
15. Patent 2319798of Russian Federation, IPC H 01 L 21/302. Method of obtaining atomically-smooth surface of gallium-arsenide substrate / Bezriadin N. N., Коtоv G. I., Starodubtsev А. А., Strygin V. D., Arsentiev I. N.; applicant for a patent and patent holder Voronezh State Technological Academy. – № 2006116830/15 ; claimed 16.05.06 ; published 20.03.08, Bul. № 8. (Rus).
16. Patent 2402103 of Russian Federation, IPC H 01 L 21/316. Method of GaAs surface etching / Erofeev Е. V., Ishutkin S. V., Kagadey V. А., Nosaeva K. S.; applicant for a patent and patent holder CJSC «Scientific production company Mikran». – №2009133993/28 ; claimed 10.09.09 ; published 20.10.10, Bul. № 29. (Rus).
17. Niskov V. J. Measurement of transient resistance of ohmic contacts to thin layers of semiconductors /
V. J. Niskov // Devices and experiment technique. – 1971. – № 1. – P. 235 – 237. (Rus).
18. Niskov V. J. Resistance of ohmic contacts to thin layers of semiconductors / V. J. Niskov,
G. А. Kubetskiy // Physics and semiconductors engineering. – 1970. – Vol. 4, № 9. – P. 1806 – 1808. (Rus).
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Published
2017-10-01
How to Cite
[1]
V. Dmitriev, “MULTICOMPONENT OHMIC CONTACTS TO GaAs”, Works of VNTU, no. 3, Oct. 2017.
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Section
Radioelectronics and Radioelectronic Equipment Design
