MULTICOMPONENT OHMIC CONTACTS TO GaAs

  • Vadim Dmitriev Zaporizhia State Engineering Academy

Abstract

The paper contains the results of the study of semiconductor wafer preprocessing, application and heat treatment modes of Ag-GE-In/n-n Ga As contacts impact on specific transient resistance.

Author Biography

Vadim Dmitriev, Zaporizhia State Engineering Academy

Head of Scientific Training Laboratory of the Department of Microelectronic Information Systems

References

1. Low noise gallium arsenide amplifiers under the influence of electromagnetic interference of high intensities [Electronic resource] / S. V. Platonov, N. V. Permiakov, B. I. Selesniov [et al.] // Bulletin of Novgorod State University. – 2012. – № 67. – P. 29 – 32. – Access mode to the resource: http://www.novsu.ru/file/1010219. (Rus).
2. Sze S. M. Physics of Semiconductor Devices, 3rd Edition / S. M. Sze, K. K. Ng. – Hoboken : A John Wiley & Sons, Inc., 2007. – 815 р.
3. Ti/Pd/Ag Contacts to n-Type GaAs for High Current Density Devices [Electronic resource] / P. Huo,
I. Rey-Stolle // Journal of Electronic Materials. – 2016. – Vol. 45, № 6. – P. 2769 – 2775. – Access mode to the resource : http://dx.doi.org/10.1007/s11664-016-4432-6.
4. Kawamura M. Electrical and morphological change of Ag–Ni films by annealing in vacuum / M. Kawamura,
M. Yamaguchi, Y. Abe, K. Sasaki // Microelectronic Engineering. – 2005. – Vol. 82, № 3 – 4. – P. 277 – 282.
5. Christou A. Solid phase formation in Au: Ge/Ni, Ag/In/Ge, In/Au: Ge GaAs ohmic contact systems / A. Christou // Solid-State Electronics. – 1979. – Vol. 22, № 2. – P. 141 – 149.
6. Dmitriev V. S. Impact of the interface on the parameters of ohmic contact / V. S. Dmitriev, L. B. Dmitrieva // Materials of X International Scientific practical conference «Actual research and development-2014» / V. S. Dmitriev, L. B. Dmitrieva. – Sofia : «Bel Grad-BG» ООD. – 2014. – Vol. 28. – P. 79 – 82. – (ISBN 978-966-8736-05-6). (Rus).
7. Thermal stability of Ag films in air prepared by thermal evaporation / L. Jing, L. Fachun, L. Limei [et al.] // Applied Surface Science. – 2007. – Vol. 253, № 17. – P. 7036 – 7040.
8. Sugawara K. Comparison of the agglomeration behavior of Ag(Al) films and Ag(Au) films / K. Sugawara,
M. Kawamura, Y. Abe, K. Sasaki // Microelectronic Engineering. – 2007. – Vol. 84, № 11. – P. 2476 – 2480.
9. Vartanian Т. А. Delayed action of illumination on the relaxation of granular silver film at thermal annealing / Т. А. Vartanian, N. B. Leonov, S. G. Prizhibelskiy // Optical Journal. – 2013. – Vol. 80, № 2. – P. 24 – 28. (Rus).
10. Electrical and structural investigations of Ag-based Ohmic contacts for InAlAs/InGaAs/InP high electron mobility transistors [Electronic resource] / W. Zhao, L. Wang, I. Adesida // Applied Physics Letters. – 2006. –
Vol. 89, № 7. – P. 072105–1–072105–3. – Access mode to the resource : http://dx.doi.org/10.1063/1.2337102.
11. Kawamura M. Electrical and morphological change of Ag–Ni films by annealing in vacuum / M. Kawamura,
M. Yamaguchi, Y. Abe, K. Sasaki // Microelectronic Engineering. – 2005. – Vol. 82, № 3 – 4. – P. 277 – 282.
12. Kim H. C. Improvement of the thermal stability of silver metallization / H. C. Kim, T. L. Alford // Journal of Applied Physics. – 2003. – Vol. 94, № 8. – Р. 5393 – 5395.
13. Markin B. V. Impact of chemical treatment on the composition of GaAs surface / B. V. Markin, V. V. Chikun // Electronic engineering. Series 1. Electronics of SHF. – 1990. – № 4. – P. 19. (Rus).
14. Physical chemical methods of senriconductors surfaces treatment / [B. D. Luft, V. А. Perevotchikov,
N. М. Vozmilova et al.]. – М. : Radio and Communication, 1982. – 136 p. (Rus).
15. Patent 2319798of Russian Federation, IPC H 01 L 21/302. Method of obtaining atomically-smooth surface of gallium-arsenide substrate / Bezriadin N. N., Коtоv G. I., Starodubtsev А. А., Strygin V. D., Arsentiev I. N.; applicant for a patent and patent holder Voronezh State Technological Academy. – № 2006116830/15 ; claimed 16.05.06 ; published 20.03.08, Bul. № 8. (Rus).
16. Patent 2402103 of Russian Federation, IPC H 01 L 21/316. Method of GaAs surface etching / Erofeev Е. V., Ishutkin S. V., Kagadey V. А., Nosaeva K. S.; applicant for a patent and patent holder CJSC «Scientific production company Mikran». – №2009133993/28 ; claimed 10.09.09 ; published 20.10.10, Bul. № 29. (Rus).
17. Niskov V. J. Measurement of transient resistance of ohmic contacts to thin layers of semiconductors /
V. J. Niskov // Devices and experiment technique. – 1971. – № 1. – P. 235 – 237. (Rus).
18. Niskov V. J. Resistance of ohmic contacts to thin layers of semiconductors / V. J. Niskov,
G. А. Kubetskiy // Physics and semiconductors engineering. – 1970. – Vol. 4, № 9. – P. 1806 – 1808. (Rus).
Published
2017-10-01
How to Cite
DMITRIEV, Vadim. MULTICOMPONENT OHMIC CONTACTS TO GaAs. Scientific Works of Vinnytsia National Technical University, [S.l.], n. 3, oct. 2017. ISSN 2307-5376. Available at: <https://works.vntu.edu.ua/index.php/works/article/view/512>. Date accessed: 23 apr. 2018.
Section
Radioelectronics and Radioelectronic Equipment Design

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