NOISE MODEL OF FET FOR FORECASTING THEIR RELIABILITY ON LEVEL OF LF NOISE

Автор(и)

  • Vasyl Kychak Vinnytsia National Technical University
  • Dmytro Myhalvskyy Vinnytsia National Technical University
  • Oleg Krypskyy Vinnytsia National Technical University

Ключові слова:

reliability forecasting, FET, mean-square noise voltage, LF noise, electronic devices

Анотація

The paper analysis internal noises of FET and suggests noise model, considering the scheme of switching. There had been researched the dependences of noise voltage of FET on the operation mode as well as determined the tolerance ranges of noise voltage within which the FET is reliable.

Біографії авторів

Vasyl Kychak, Vinnytsia National Technical University

Doctor of Sc. (Eng), Professor, Head of Department for Telecommunication Systems and Television

Dmytro Myhalvskyy, Vinnytsia National Technical University

Post graduate student with Department of Telecommunication Systems

Oleg Krypskyy, Vinnytsia National Technical University

Post graduate student with Department of Telecommunication Systems

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Переглядів анотації: 220

Опубліковано

2015-12-01

Як цитувати

[1]
V. Kychak, D. Myhalvskyy, і O. Krypskyy, «NOISE MODEL OF FET FOR FORECASTING THEIR RELIABILITY ON LEVEL OF LF NOISE», SWVNTU, вип. 4, Груд 2015.

Номер

№ 4 (2009): 2009 №4

Розділ

Radioelectronics and Radioelectronic Equipment Design

Метрики

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