NOISE MODEL OF FET FOR FORECASTING THEIR RELIABILITY ON LEVEL OF LF NOISE
Keywords:reliability forecasting, FET, mean-square noise voltage, LF noise, electronic devices
AbstractThe paper analysis internal noises of FET and suggests noise model, considering the scheme of switching. There had been researched the dependences of noise voltage of FET on the operation mode as well as determined the tolerance ranges of noise voltage within which the FET is reliable.
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How to Cite
V. Kychak, D. Myhalvskyy, and O. Krypskyy, “NOISE MODEL OF FET FOR FORECASTING THEIR RELIABILITY ON LEVEL OF LF NOISE”, Works of VNTU, no. 4, Dec. 2015.
Radioelectronics and Radioelectronic Equipment Design