NOISE MODEL OF FET FOR FORECASTING THEIR RELIABILITY ON LEVEL OF LF NOISE
Keywords:
reliability forecasting, FET, mean-square noise voltage, LF noise, electronic devicesAbstract
The paper analysis internal noises of FET and suggests noise model, considering the scheme of switching. There had been researched the dependences of noise voltage of FET on the operation mode as well as determined the tolerance ranges of noise voltage within which the FET is reliable.Downloads
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Published
2015-12-01
How to Cite
[1]
V. Kychak, D. Myhalvskyy, and O. Krypskyy, “NOISE MODEL OF FET FOR FORECASTING THEIR RELIABILITY ON LEVEL OF LF NOISE”, Works of VNTU, no. 4, Dec. 2015.
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Section
Radioelectronics and Radioelectronic Equipment Design