CGS-BASED NONVOLATILE MEMORY PROGRAMMING SPEED

Ivan Slobodian

Автор(и)

Ivan Slobodian Vinnytsia National Technical University

Ключові слова:

phase change, on /off switching speed, crystallization-amorphization

Анотація

The paper studies the influence of a set of factors on the speed of programming the nonvolatile
memory (NVM) based on chalcogenide glassy semiconductor (CGS). The method is described for
determining the speed of programming the device switching on (crystallization, low-resistance state) and
switching it off (amorphization, high-resistance state). It is also shown that the speed of switching off and on
the NVM depends mainly on the electric contact of the device.

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