GENERALIZED CONVETERS OF IMMITTANCE ON THE BASIS OF INJECTION-TRANSIT TIME GROUNDED SOURCE TRANSISTOR STRUCTURE

Authors

  • Ludmila Lischinskaya Vinnytsia Institute of Trade and Economics
  • Igor Buliga Vinnitsa National Technical University
  • Andriy Shvedyuk Vinnitsa National Technical University
  • Nikolay Filinyuk Vinnitsa National Technical University

Keywords:

injection-flight transistor structure, generalized transformer of immittance

Abstract

Properties of injection-flight transistor structure with a general source are analysed as the generalized transformer of immittance, the tables of transformation of immittance are got

Author Biographies

Ludmila Lischinskaya, Vinnytsia Institute of Trade and Economics

Candidate of Sc(Eng), o Vinnitsa Trade-Economic Institute

Igor Buliga, Vinnitsa National Technical University

Engineer of the Chair of computer design and telecommunication technologies, VNTU

Andriy Shvedyuk, Vinnitsa National Technical University

Post-graduate student of the Chair of computer design and telecommunication technologies

Nikolay Filinyuk, Vinnitsa National Technical University

Doctor of Sc(Eng), Head of the Chair of computer design and telecommunication technologies

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Abstract views: 135

Published

2015-12-02

How to Cite

[1]
L. Lischinskaya, I. Buliga, A. Shvedyuk, and N. Filinyuk, “GENERALIZED CONVETERS OF IMMITTANCE ON THE BASIS OF INJECTION-TRANSIT TIME GROUNDED SOURCE TRANSISTOR STRUCTURE”, Works of VNTU, no. 2, Dec. 2015.

Issue

No. 2 (2008): 2008№2

Section

Radioelectronics and Radioelectronic Equipment Design

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