GENERALIZED CONVETERS OF IMMITTANCE ON THE BASIS OF INJECTION-TRANSIT TIME GROUNDED SOURCE TRANSISTOR STRUCTURE

Автор(и)

  • Ludmila Lischinskaya Vinnytsia Institute of Trade and Economics
  • Igor Buliga Vinnitsa National Technical University
  • Andriy Shvedyuk Vinnitsa National Technical University
  • Nikolay Filinyuk Vinnitsa National Technical University

Ключові слова:

injection-flight transistor structure, generalized transformer of immittance

Анотація

Properties of injection-flight transistor structure with a general source are analysed as the generalized transformer of immittance, the tables of transformation of immittance are got

Біографії авторів

Ludmila Lischinskaya, Vinnytsia Institute of Trade and Economics

Candidate of Sc(Eng), o Vinnitsa Trade-Economic Institute

Igor Buliga, Vinnitsa National Technical University

Engineer of the Chair of computer design and telecommunication technologies, VNTU

Andriy Shvedyuk, Vinnitsa National Technical University

Post-graduate student of the Chair of computer design and telecommunication technologies

Nikolay Filinyuk, Vinnitsa National Technical University

Doctor of Sc(Eng), Head of the Chair of computer design and telecommunication technologies

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Переглядів анотації: 170

Опубліковано

2015-12-02

Як цитувати

[1]
L. Lischinskaya, I. Buliga, A. Shvedyuk, і N. Filinyuk, «GENERALIZED CONVETERS OF IMMITTANCE ON THE BASIS OF INJECTION-TRANSIT TIME GROUNDED SOURCE TRANSISTOR STRUCTURE», Scientific Works of Vinnytsia National Technical University, вип. 2, Груд 2015.

Номер

№ 2 (2008): 2008№2

Розділ

Radioelectronics and Radioelectronic Equipment Design

Метрики

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